document: Technology CAD of SiGe-heterojunction field effect transistors A 2D virtual wafer fabrication simulation suite has been employed for the technology CAD of SiGe channel heterojunction field effect transistors -LRB- HFETs -RRB- . Complete fabrication process of SiGe p-HFETs has been simulated . The SiGe material parameters and mobility model were incorporated to simulate Si/SiGe p-HFETs with a uniform germanium channel having an L/sub eff / of 0.5 mu m . A significant improvement in linear transconductance is observed when compared to control-silicon p-MOSFETs
doc_bio_tags: B I O O O O O O O O O O O O O O O O O B I O B O B I I I O O O O O B I O B O O O O O O B B I O B I O O O O O O O O O O O O O O O O O O O O O O O O O B I O O O O O O O
extractive_keyphrases: technology cad heterojunction field effect transistors sige fabrication process material parameters mobility model linear transconductance
abstractive_keyphrases: uniform channel 0.5 micron